Hv/bcd Principal Engineer

NXP USA INC.

High voltage device architecture design
Bcd process nodes 180nm to 55nm
Tcad simulation expertise sentaurus silvaco
This role leads the architecture design and optimization of HV devices on advanced BCD nodes ranging from 180nm to 55nm

Job Summary

  • This role leads the architecture design and optimization of HV devices on advanced BCD nodes ranging from 180nm to 55nm.
  • Candidates must utilize TCAD tools for 2D/3D simulations and JMP for statistical analysis of DOE and WAT data.
  • The position requires deep collaboration with Process Integration and Product Engineering teams to resolve manufacturing bottlenecks.

Matching Summary

This role leads the architecture design and optimization of HV devices on advanced BCD nodes ranging from 180nm to 55nm.

Skills & Requirements

Must-have

  • High voltage device architecture design
  • BCD process nodes 180nm to 55nm
  • TCAD simulation expertise Sentaurus Silvaco
  • Statistical data analysis using JMP
  • Cadence layout and test structure design

Nice-to-have

  • Experience with GaN SiC or IGBT development
  • Knowledge of silicon photonics integration
  • Understanding of mask flow and doping profiles
  • Yield enhancement through CP FT data correlation

Key Requirements

  • Master's or Ph.D. in EE or Physics
  • 10+ years of semiconductor industry experience
  • Profound knowledge of device physics and architecture

Work Rights

Not specified

Tailored Resume

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