The successful candidate will be responsible for the analysis, and development of accurate and predictive compact and behavioral models for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) used in high-frequency and high-power applications
Job Summary
The successful candidate will be responsible for the analysis, and development of accurate and predictive compact and behavioral models for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) used in high-frequency and high-power applications.
This role involves close collaboration with process engineers, circuit designers, and product development teams to ensure our GaN technologies meet the highest performance and reliability standards for next-generation wireless communication systems.
We are a place to innovate and shape the future of wireless communications, starting with our employees as a unified global team bringing a commitment to excellence, growth and a passion for creating what's next.
Matching Summary
The successful candidate will be responsible for the analysis, and development of accurate and predictive compact and behavioral models for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) used in high-frequency and high-power applications.
Skills & Requirements
Must-have
RF GaN HEMT modeling
Device characterization
Compact and behavioral models
TCAD and circuit simulation tools
RF characterization equipment
Python, MATLAB, C++ programming
Nice-to-have
Systems-level expertise
Global manufacturing scale
Novel modeling solutions
Mentorship of junior engineers
Key Requirements
Master's or Ph.D. in Electrical Engineering, Applied Physics, or related field
15+ years of experience in semiconductor device characterization and modeling
Expertise in RF GaN HEMT technologies
Proficiency with industry-standard RF simulation and modeling tools