National Security Solutions (nss) Thin Film Growth Internship
KBR, Inc.
Beavercreek Township, OH, US
Onsite
Mocvd growth of β-ga2o3 and gan
Semiconductor epitaxial growth by mocvd
Thin-film characterization
Your work will have a profound impact on the country’s most critical role – protecting our national security
Job Summary
Your work will have a profound impact on the country’s most critical role – protecting our national security.
As a KBR Thin Film Growth intern, you will work with scientists and engineers in the Air Force Research Laboratory Sensors Directorate, Electronic Devices Branch at Wright-Patterson AFB near Dayton, OH.
Join us and be part of the team exploring evolutionary and revolutionary electronic device development with potential for high frequency microwave/millimeter wave and high-speed electronics applications!
Matching Summary
Your work will have a profound impact on the country’s most critical role – protecting our national security.
Skills & Requirements
Must-have
MOCVD growth of β-Ga2O3 and GaN
semiconductor epitaxial growth by MOCVD
thin-film characterization
thin-film growth theory
Nice-to-have
self-motivated and able to work independently
good communication skills, both oral and written
Key Requirements
Ability to obtain a U.S. Government Secret Security Clearance
pursuing an advanced degree in Physics, Electrical Engineering, Material Science, Chemistry, or other related field
expertise in optimizing growth parameters
familiarity with the operation of growth tools
expertise thin-film characterization (x-ray diffraction, atomic force microscope, Hall measurements)
excellent understanding of thin-film growth theory
must know how to use computers and software applications
Work Rights
Ability to obtain a U.S. Government Secret Security Clearance