Mts/sr. Mts Engineer – Discrete Power Fet Technology Development

onsemi

Hopewell Junction, NY, United States
Base: $147,000 to $250,000; bonus/equity: not spec...
Discrete power fets
Device architecture
Electrical targets
Lead technology development for onsemi’s advanced nodes of discrete power FETs, owning device architecture from concept definition through qualification and high-volume manufacturing

Job Summary

  • Lead technology development for onsemi’s advanced nodes of discrete power FETs, owning device architecture from concept definition through qualification and high-volume manufacturing.
  • Conduct or direct TCAD, electro-thermal, and compact modeling simulations to predict performance, parasitics, and reliability behavior.
  • Provide technical guidance, coaching, and mentorship to junior engineers; matrix-manage engineers across multiple organizations.

Matching Summary

Lead technology development for onsemi’s advanced nodes of discrete power FETs, owning device architecture from concept definition through qualification and high-volume manufacturing.

Salary

Base: $147,000 to $250,000; Bonus/Equity: Not specified; Benefits: Competitive benefits package

Skills & Requirements

Must-have

  • discrete power FETs
  • device architecture
  • electrical targets
  • process integration
  • device characterization
  • root-cause analysis
  • semiconductor physics

Nice-to-have

  • high-voltage applications
  • automotive AEC-Q101
  • wide-bandgap devices
  • advanced packaging
  • statistical analysis tools

Key Requirements

  • PhD, Master’s, or Bachelor's degree
  • Semiconductor device design experience
  • Post wafer fab operations experience
  • Wafer level testing experience
  • Technology development to volume ramp experience
  • 300mm fabrication experience
  • TCAD, SPICE proficiency

Work Rights

Not specified

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