Principal Engineer, Hig Hbm-architecture

Micron Technology

**
Extensive experience with dram operation
In-depth analog and mixed-signal design expertise
Hands-on dram command decoding and bank logic
** Micron Technology is seeking a Principal Engineer specializing in High Bandwidth Memory (HBM) architecture to design high-speed interfaces between DRAM and Base die components. The ideal candidate will have significant experience in the memory industry, particularly with DRAM operations and mixed-signal design, and will contribute to innovative memory and storage solutions. **

Job Summary

  • Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence.
  • The role involves designing the high-speed DRAM and Base die interface in HBM cubes, including command logic and serialization schemes.
  • Candidates must have extensive experience in the memory industry with an MS degree or 10+ years with a BS degree.

Matching Summary

Match Score: 75

** Micron Technology is seeking a Principal Engineer specializing in High Bandwidth Memory (HBM) architecture to design high-speed interfaces between DRAM and Base die components. The ideal candidate will have significant experience in the memory industry, particularly with DRAM operations and mixed-signal design, and will contribute to innovative memory and storage solutions. **

Skills & Requirements

Must-have

  • Extensive experience with DRAM operation
  • In-depth analog and mixed-signal design expertise
  • Hands-on DRAM command decoding and bank logic
  • Proficiency with FINESIM, HSPICE, and VERILOG simulators
  • Knowledge of JEDEC specifications for DDR/LPDDR/GDDR/HBM

Nice-to-have

  • Proven track record of innovation in memory development
  • Excellent communication skills for complex technical concepts
  • Initiative-taking and enthusiastic team collaborator
  • Experience with floor planning and full chip testbench
  • Ability to analyze timing/area/power in mixed-signal design

Key Requirements

  • 7+ years proven experience in Memory industry with MS degree
  • 10+ years proven experience in Memory industry with BS degree
  • Deep knowledge of RAS/CAS chain design

Work Rights

Not specified

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