Mts/sr. Mts Engineer – Discrete Power Fet Technology Development
onsemi
Hopewell Junction, NY, US
Base: $147,000 to $250,000; bonus/equity: not spec...
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Discrete power fet device design
Tcad and electro-thermal modeling
300mm fabrication process knowledge
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Onsemi is seeking a Member of Technical Staff (MTS) or Senior Member of Technical Staff (SMTS) Engineer to lead the development of advanced discrete power FET technologies in Hopewell Junction, NY. The ideal candidate will have a strong background in semiconductor device design, particularly with discrete power devices, and will play a key role in shaping the company's future power device roadmap.
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Job Summary
This role drives the development of next-generation discrete power FET technologies with high technical ownership from concept to volume manufacturing.
Candidates will collaborate across design, process integration, and modeling teams to optimize Rds(on), switching performance, and power density.
The position offers a competitive base salary range of $147,000 to $250,000 along with a comprehensive benefits package.
Matching Summary
Match Score: 75
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Onsemi is seeking a Member of Technical Staff (MTS) or Senior Member of Technical Staff (SMTS) Engineer to lead the development of advanced discrete power FET technologies in Hopewell Junction, NY. The ideal candidate will have a strong background in semiconductor device design, particularly with discrete power devices, and will play a key role in shaping the company's future power device roadmap.
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Salary
Base: $147,000 to $250,000; Bonus/Equity: Not specified; Benefits: Competitive package including health and wellness options
Skills & Requirements
Must-have
Discrete power FET device design
TCAD and electro-thermal modeling
300mm fabrication process knowledge
DOE and 6-sigma root cause analysis
Post wafer fab operations experience
Nice-to-have
Wide-bandgap SiC/GaN device familiarity
Automotive AEC-Q101 reliability testing
Advanced packaging techniques like copper clip
Python or JMP statistical analysis skills
Mentorship of junior engineers
Key Requirements
PhD, Master's, or Bachelor's in EE, Physics, or Materials Science
Proven experience in semiconductor device design for discrete power FETs
Experience taking technologies from development through qualification to volume ramp