Hv/bcd Principal Engineer

NXP Semiconductors

High voltage device architecture
Bcd process nodes 180nm to 55nm
Tcad simulation expertise
This role leads the architecture design and optimization of HV devices on advanced BCD nodes ranging from 180nm to 55nm

Job Summary

  • This role leads the architecture design and optimization of HV devices on advanced BCD nodes ranging from 180nm to 55nm.
  • Candidates must utilize TCAD tools for 2D/3D process simulations and JMP for statistical analysis of DOE and WAT data.
  • The position requires deep collaboration with Process Integration and Product Engineering teams to resolve yield and reliability bottlenecks.

Matching Summary

This role leads the architecture design and optimization of HV devices on advanced BCD nodes ranging from 180nm to 55nm.

Skills & Requirements

Must-have

  • High Voltage Device Architecture
  • BCD Process Nodes 180nm to 55nm
  • TCAD Simulation Expertise
  • JMP Statistical Data Analysis
  • Cadence Layout and Virtuoso

Nice-to-have

  • GaN SiC or IGBT Development Experience
  • Silicon Photonics Knowledge
  • Process Integration Understanding
  • Product Engineering Yield Enhancement
  • Cross-functional Collaboration Skills

Key Requirements

  • Master's or Ph.D. in EE or Physics
  • 10+ years semiconductor industry experience
  • Profound knowledge of Device Physics
  • Hands-on experience with BCD process nodes

Work Rights

Not specified

Tailored Resume

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