Fab 9 Technology Development Gan Epitaxial Engineer

GlobalFoundries

Essex Junction, Vermont, United States
Base: $118,000.00 - $210,000.00; bonus/equity: not...
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Master's degree in engineering or physical science
1-3 years relevant engineering experience
Mocvd iii-v epitaxial growth techniques
** GlobalFoundries is seeking a Lead Epitaxy Development Engineer for its Fab 9 Technology Development team in Essex Junction, Vermont. The role focuses on developing and qualifying semiconductor GaN Epitaxy processes, ensuring they meet performance, reliability, yield, and cost objectives while collaborating with various engineering teams. **

Job Summary

  • GlobalFoundries is seeking a Lead Epitaxy development engineer to design and develop world-class differentiated semiconductor technologies at Fab9 in Essex Junction, Vermont.
  • The role involves defining and optimizing III-V superlattices, buffers, and device layers while collaborating with cross-organization teams to meet performance and yield objectives.
  • Candidates must possess comprehensive knowledge of modern device physics and familiarity with MOCVD III-V epitaxial growth techniques to drive the advancement of analog, mixed signal, and RF applications.

Matching Summary

Match Score: 75

** GlobalFoundries is seeking a Lead Epitaxy Development Engineer for its Fab 9 Technology Development team in Essex Junction, Vermont. The role focuses on developing and qualifying semiconductor GaN Epitaxy processes, ensuring they meet performance, reliability, yield, and cost objectives while collaborating with various engineering teams. **

Salary

Base: $118,000.00 - $210,000.00; Bonus/Equity: Not specified; Benefits: Not specified

Skills & Requirements

Must-have

  • Master's degree in engineering or physical science
  • 1-3 years relevant engineering experience
  • MOCVD III-V epitaxial growth techniques
  • Device physics knowledge of FET, BJT, LDMOS, HEMT
  • Experience with SIMS, SEM, TEM, AFM characterization

Nice-to-have

  • PhD in Electrical Engineering or Material Science
  • 3-5 years epitaxial growth engineering experience
  • TCAD simulation skills
  • Strong problem-solving and communication skills
  • Ability to work in global matrixed team environment

Key Requirements

  • Minimum Master's degree in relevant field
  • 1-3 years relevant engineering experience
  • English fluency (written & verbal)
  • Knowledge of device reliability mechanisms
  • Familiarity with TCAD simulation tools

Work Rights

Not specified

Tailored Resume

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