Senior Foundry Device Engineer

Intel Retiree Medical Plan Trust

Phoenix, Arizona, United States
Base: $164,470.00-232,190.00 usd; bonus/equity: st...
Cmos device physics
Device parametric data analysis
Design of experiment (doe)
Our mission is to effectively bridge the transition from Technology Development (TD) to High Volume Manufacturing (HVM), taking a technology node from 1st product PRQ to high yields across multiple products, and to enhance the technology for our customers

Job Summary

  • Our mission is to effectively bridge the transition from Technology Development (TD) to High Volume Manufacturing (HVM), taking a technology node from 1st product PRQ to high yields across multiple products, and to enhance the technology for our customers.
  • As a Senior Device Engineer, you may be responsible for developing new device technology, customizing device architectures to customer needs, and refining fabrication processes.
  • We offer a competitive salary and financial benefits such as bonuses, life and disability insurance, opportunities to buy Intel stock at a discounted rate, and Intel stock awards.

Matching Summary

Our mission is to effectively bridge the transition from Technology Development (TD) to High Volume Manufacturing (HVM), taking a technology node from 1st product PRQ to high yields across multiple products, and to enhance the technology for our customers.

Salary

Base: $164,470.00-232,190.00 USD; Bonus/Equity: stock bonuses, Intel stock awards; Benefits: health, retirement, vacation

Skills & Requirements

Must-have

  • CMOS device physics
  • device parametric data analysis
  • design of experiment (DOE)
  • advanced CMOS device technology
  • foundry NPI activities

Nice-to-have

  • technical problem-solving skills
  • collaborative team player
  • mentorship of junior engineers
  • customer needs balance

Key Requirements

  • 9+ years of experience in CMOS device engineering
  • Bachelor's Degree in Electrical Engineering, Physics, or related field
  • 6+ years of experience with Post graduate degree
  • Experience in a foundry environment
  • Experience with 3nm–16nm FinFETs and sub‑3nm GAA FETs

Work Rights

Not specified

Tailored Resume

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