Senior Foundry Device Engineer

Intel Corporation

Phoenix, Arizona, United States
Base: $164,470.00-232,190.00 usd; bonus/equity: st...
Cmos device physics
Device parametric data analysis
Design of experiment (doe)
Our mission is to effectively bridge the transition from Technology Development (TD) to High Volume Manufacturing (HVM), taking a technology node from 1st product PRQ to high yields across multiple products, and to enhance the technology for our customers

Job Summary

  • Our mission is to effectively bridge the transition from Technology Development (TD) to High Volume Manufacturing (HVM), taking a technology node from 1st product PRQ to high yields across multiple products, and to enhance the technology for our customers.
  • As a Senior Device Engineer, you may be responsible for collaborating with the Development team to develop new device technology and customize newly developed device architectures to customer needs.
  • We offer a competitive salary and financial benefits such as bonuses, life and disability insurance, opportunities to buy Intel stock at a discounted rate, and Intel stock awards.

Matching Summary

Our mission is to effectively bridge the transition from Technology Development (TD) to High Volume Manufacturing (HVM), taking a technology node from 1st product PRQ to high yields across multiple products, and to enhance the technology for our customers.

Salary

Base: $164,470.00-232,190.00 USD; Bonus/Equity: Stock bonuses, Intel stock awards; Benefits: Health, retirement, vacation

Skills & Requirements

Must-have

  • CMOS device physics
  • Device parametric data analysis
  • Design of Experiment (DOE)
  • Foundry customer engineering
  • Advanced CMOS device technology

Nice-to-have

  • Continuous learning and development
  • Cross-functional team collaboration
  • Aggressive schedule development
  • Technical guidance and mentorship

Key Requirements

  • 9+ years of experience in CMOS device engineering
  • Bachelor's Degree in Electrical Engineering, Physics, or related field
  • 6+ years of experience with Post graduate degree
  • Experience in foundry NPI activities
  • Experience with 3nm–16nm FinFETs and sub‑3nm GAA FETs

Work Rights

Not specified

Tailored Resume

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