Scientist/Senior Scientist - SiC crystal growth by PVT (APM / NSTIC-GaN), IME
A*STAR RESEARCH ENTITIES
Singapore
Not specified (assumed hybrid based on typical research institutions)
Phd in materials science or physics
3-5 years sic crystal growth experience
Physical vapor transport (pvt) expertise
A*STAR is seeking a Scientist/Senior Scientist specializing in silicon carbide (SiC) crystal growth using the Physical Vapor Transport (PVT) method. The role involves leading projects in the development of SiC wafer production for RF and millimeter-wave devices, with a focus on optimizing growth technologies and collaborating with various teams
Job Summary
The role involves leading the development of crystal growth technologies for semi-insulating silicon carbide wafers used as substrates for RF and millimeter-wave GaN devices.
Candidates will design and execute experiments using Physical Vapor Transport (PVT) while applying AI/ML methods to optimize growth processes and predict material properties.
The position requires guiding equipment engineers to maintain tool uptime above 90% and collaborating with device teams to ensure material performance meets strict requirements.
Matching Summary
Match Score: 85
A*STAR is seeking a Scientist/Senior Scientist specializing in silicon carbide (SiC) crystal growth using the Physical Vapor Transport (PVT) method. The role involves leading projects in the development of SiC wafer production for RF and millimeter-wave devices, with a focus on optimizing growth technologies and collaborating with various teams.
Skills & Requirements
Must-have
PhD in Materials Science or Physics
3-5 years SiC crystal growth experience
Physical Vapor Transport (PVT) expertise
Chamber-scale simulation experience
SiC wafer characterization skills
Nice-to-have
AI/ML application in materials science
Digital twin model development
Prior industry experience
Strong communication skills
Self-starter with problem-solving abilities
Key Requirements
PhD in Materials Science, Electrical Engineering, or Physics
3-5 years hands-on experience in SiC crystal growth
Experience with chamber-scale simulations for PVT processes
Proven background in SiC materials science and characterization